WebInternational Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. The company was founded in 1947 and was headquartered in El Segundo, California. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power ... WebSep 27, 2024 · IRF730 Features Type: n-channel MOSFET Maximum Junction Temperature = 150 C Maximum Gate-to-Source Voltage = 20 V Drain-to-Source Breakdown Voltage = 400 …
IRF730A - FAIRCHILD - FETs - Single - Kynix Semiconductor
Webirf730a - Free download as PDF File (.pdf), Text File (.txt) or read online for free. datasheet. datasheet. Irf 730 A. Uploaded by Jose Mamani. 0 ratings 0% found this document useful (0 votes) 7 views. 9 pages. Document Information click to expand document information. Description: datasheet. WebIRF730A Datasheet : N-Channel Power MOSFET, IRF730A PDF VIEW Download Nell Semiconductor Co., Ltd, IRF730A 2 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits. Electronic component search … birrd hospital
IRF730A, SiHF730A Datasheet by Vishay Siliconix
Web2 www.irf.com S D G Electrical Characteristics @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V (BR)DSS/∆T J Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C R DS(on) Static Drain-to-Source On-Resistance ––– 21 26.5mΩ VGS(th) Gate Threshold Voltage 2.0 … WebIRF730A SiHF730A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage … WebBuy IRF730A VISHAY SILICONIX , Learn more about IRF730A Trans MOSFET N-CH 400V 5.5A 3-Pin (3+Tab) TO-220AB, View the manufacturer, and stock, and datasheet pdf for the IRF730A at Jotrin Electronics. birrd name in english \u0026 hindi